DOI:10.14939/1804O.001.v1
2018.12.24
[Original paper]
High-Power Infrared Silicon Light-emitting Diodes Fabricated and Opereted using Dressed Photones
Motoichi Ohtsu
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Abstract
Mesh-electrode type and flip-chip type silicon light-emitting diodes were fabricated by using dressed photons. Their emission spectral profiles showed several peaks originating from phonons in a dressed-photon–phonon, from which the existence of a photon breeding phenomenon was confirmed. The highest optical output power emitted from these devices was 2 W at a substrate temperature of 77 K. The highest optical power density from the flip-chip type was as high as eight-times that from the mesh-electrode type.
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The copyright holder for this preprint is the author. It is made available under a CC-BY-NC-ND 4.0 Internationallicense .
Research Origin for Dressed Photon,3-13-19 Moriya-cho, Kanagawa-ku, Yokohama, Kanagawa 221-0022 Japan
